Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologi...

Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3 nanowires.

Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by ene...

Cathodoluminescence depth profiling of ion-implanted GaN

GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst

The authors experimentally demonstrate a simple and efficient approach for nucleating the catalytic chemical vapor deposition CVD growth of GaN nanowires, Ga2O3 nanowires, and Ga2O3 nanoribbons by using ion implantation of Fe+ into thermally grown SiO2 layers and subsequent annealing to form the catalyst nanoparticles. This work shows that ion implantation can be used as a versatile method to c...

Transition-metal doped zinc oxide nanowires.

The introduction of impurity atoms into semiconducting materials is the primary method for controlling the properties of the semiconductor, such as band gap or electrical conductivity. This practice is routinely performed with bulk semiconductors and, more recently, has been extended to nanoscale semiconductors as well. In particular, II–VI and III–V semiconductors that have been doped with tra...